发明名称 METHOD FOR CHEMICALLY POLISHING INSB
摘要 PURPOSE:To form a flat surface free from a working strain by chemically polishing the surface of an InSb compound semiconductor with a specified polishing soln. CONSTITUTION:An InSb compound semiconductor useful as an infrared-ray detecting element, a magneto-resistance element or the like is chemically polished with a soln. contg. lactic acid and hydrogen peroxide as a polishing soln. A flat surface free from working strain is easily formed.
申请公布号 JPS59150087(A) 申请公布日期 1984.08.28
申请号 JP19830024415 申请日期 1983.02.16
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 FUJISADA HIROYUKI
分类号 C23F1/30;C23F3/00;C23F3/06;C30B33/10;H01L21/306 主分类号 C23F1/30
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