发明名称 |
Method of manufacturing mask type read only memory |
摘要 |
A method of manufacturing a mask type read only memory having an interconnection wiring and a plurality of MOS transistors, wherein selected source and drain regions are shortened in accordance with a user program after the interconnection wiring layer is formed on the semiconductor substrate. After that, a protective film is formed over the entire surface of the read only memory.
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申请公布号 |
US4467520(A) |
申请公布日期 |
1984.08.28 |
申请号 |
US19820408873 |
申请日期 |
1982.08.17 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
SHIOTARI, YOSHIHISA |
分类号 |
G11C17/00;G11C17/08;H01L21/265;H01L21/8246;H01L27/112;H01L29/78;(IPC1-7):H01L21/26;H01L21/22 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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