| 摘要 |
PURPOSE:To prevent the deterioration of element characteristics due to the damage of a substrate, the film abrasion of a field oxide film by a method wherein the insulation film on the side wall of a non single crystal Si film pattern to isolate the source and drain electodes from the constituent member of a gate electrode is formed by thermal oxidation. CONSTITUTION:A thermal oxide film, an MoSi2 film pattern 26, and a polycrystalline Si film pattern 27 are formed on the surface of a P type Si substrate 21 and then etched, thus forming a gate oxide film 28. The N<+> type source and drain regions 29 and 30 are formed by As ion implantation and heat treatment. The thermal oxide film is formed and etched, resulting in the formation of a remnant thermal oxide film 33' only on the side wall of said pattern 27. An Mo film is deposited, heat treatment is performed, and accordingly Mo silicide layers 35 and 36 serving as the source and drain electrodes and an Mo silicide pattern 37 constituting the gate electrode of poly side structure are formed. The MOS semiconductor device is obtained by depositing an oxide film 38 and finally forming an Al wiring 40. |
