| 摘要 |
PURPOSE:To permit the correction of a pattern distortion, i.e. pitch-error, caused by the elastic deformation of a treated substance by a method wherein the treated substance is fixed on a stage and the correction rate of the exposure pattern is determined in accordance with the distribution of the height of the treated surface of this treated substance and the exposure information is corrected by the correction rate and then the treated substance is exposed. CONSTITUTION:A maskplank is fixed on a stage and, at that condition, the distribution of the height of its surface is measured by a laser beam interferometer or the like which is built in an electron beam exposure equipment and these data are memorized by a magnetic tape memory equipment 11. The contraction rate or the expansion rate DELTAL is calculated by taking out the data from the memory equipment 11 and putting them into a central processing equipment 12 and then memorized by a magnetic disk memory equipment. Then the data of DELTAL are again put into the central processing equipment 12 and the position (x') containing the correction rate is lead out. According to the information of this position (x') containing the correction rate, an electron beam deflection electrode 19 is controlled so that the electron beam is guided to the required accurate position and the exposure process is performed.
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