| 摘要 |
PURPOSE:To reduce significantly the mounted inferiority of a crystal defect, produced by adhesion of fine dust in the atmosphere, realize accurate temperature setting, improve reproducibility and make the maintenance of an equipment easy by a method wherein an epitaxial vapor growth is performed while purging gas, which purges vapor growth products adhered to the inside surface of the upper part of a reaction chamber, is let blow out. CONSTITUTION:Gas is introduced through a gas introducing tube 11 which has double- tube construction and penetrates through the center of a base stand 1 vertically. The gas introducing tube 11 is made of a heat resistant material such as quartz or SiC. The purging gas, for instance H2 gas, is introduced into the inner tube 11a of the tube 11 from its bottom end and let blow out from its open top end against the top part of the inside surface of a bell-jar 2 to purge unwillingly adhered vapor growth products and exhausted from a gas exhaust outlet 8. The top part of an outer tube 11b is closed by a reactive gas deflecting plate 11c and opening holes 11d, 11d..., through which growth gas is let blow out above the plane occupied by a group of arranged wafers to form a vapor growth atmosphere by letting the gas flow above wafers. The diameter and the height of the inner tube 11a, quantity of the purging gas and etc. are determined corresponding to the dimensions of the reaction chamber. |
