发明名称 REACTIVE ION ETCHING METHOD
摘要 PURPOSE:To perform stably etching of a good pattern in the stage of a reactive ion etching treatment by placing a metallic plate formed with a specific org. polymer film on an electrode to be placed thereon with a sample and placing the sample thereon. CONSTITUTION:A metallic plate 3 formed of a stainless steel, etc. is placed on an electrode 1 to be placed thereon with a sample 2 to be etched in parallel flat plate electrodes and the sample 2 is placed thereon in the stage of subjecting the sample to etching of a desired pattern by a reactive ion etching method. A film 4 of an org. high polymer contg. no oxygen such as polystyrene, PP or the like is preliminarily coated and calcined on the surface of the plate 3. The generation of oxygen due to the irradiation of ion having accelerated energy is obviated and therefore the etching pattern to be formed is excellent.
申请公布号 JPS59150086(A) 申请公布日期 1984.08.28
申请号 JP19830023942 申请日期 1983.02.16
申请人 NIPPON DENKI KK 发明人 GOKAN HIROSHI
分类号 C23F4/00;C23F1/00;H01L21/302;H01L21/306;H01L21/3065 主分类号 C23F4/00
代理机构 代理人
主权项
地址