| 摘要 |
PURPOSE:To enable a film having homogeneous quality and thickness and being in close contact with a base body to be formed with high reproducibility by pouring C ions onto a base body made of a high melting point substance while vacuum vapordepositioning, over the base body 7, an emitter material consisting of at least one element chosen from among Ti, V, Nb, Hf and Ta. CONSTITUTION:C ions are poured onto a base body 7 made of a high melting point substance while vacuum vapordepositioning, over the base body 7, an emitter material 9 consisting of at least one element chosen from among Ti, V, Zr, Nb, Hf and Ta. For exmple a holder 8 to which the base body 7 is fixed, a vacuum bell jar 10 containing a deposition source 9 and a device consisting of an ion source 11, an ion accelerator 12 and an ion-pouring part containing a mass spectrograph 13 are used. In this case, about 5X10<17>C ions/cm<2> are poured under the condition of 50KeV acceleration energy while vapordepositioning Zr or Ti used as the emitter material 9 under the vacuum condition of 5X10<-7> torr. |
