| 摘要 |
<p>PURPOSE:To remove a resist completely and easily after molding a pattern of an amorphous silicon film, and to obtain a TFT of excellent performance characteristics and reliability by forming the resist on a first Al film as a first layer source-drain electrode without being directly formed on the amorphous silicon film when the amorphous silicon film is patterned. CONSTITUTION:Ta2O5 is formed on a glass substrate 1 as a stop layer 2 for etching. A Ta film is formed on the stop layer 2 and patterned up to a gate electrode 3. (Fig. A): The gate electrode 3 is anodic-oxidized to form a gate insulating film 4 made of Ta2O5. (Fig. B): The Si3N4 film 5 and an amorphous silicon film 6 are overlapped and laminated through a plasma CVD method. A first Al film 8 is deposited on the amorphous silicon film 6 through an evaporation method. (Fig. C): A photo-resist is applied on the first Al film 8, and the first Al film 8, the Si3N4 film 5 and the amorphous silicon film 6 are patterned. (Fig. D): Al Is evaporated and formed on the whole surface as second layer source-drain electrodes 7, and patterned, thus forming a TFT. (Fig. E).</p> |
