发明名称 DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT
摘要 PURPOSE:To enable to safely supply electric power of high voltage and high frequency to a load without sacrificing the element characteristics by connecting an inductor between the connecting point of a gate turn OFF SCR and a switching transistor and the gate of the SCR. CONSTITUTION:An inductor 11 is connected between the series connecting point of a gate turn OFF SCR (GTO) 7 and a high speed switching transistor TR8 and the gate of the GTO7, and a capacitor 12 for absorbing the transient voltage is provided in parallel with the TR8. Values of the inductor 11, the capacitor 12 and the resistor 10 are selected so that the circuit of them become in non resonance mode. Since the inductor 11 is provided, a current is flowed from a gate power source through the inductor 11 and the TR8 during the ON period of the GTO7, and when an OFF signal is inputted to the TR8, the current is flowed from the cathode to the gate of the GTO7 to become the arc extinguishing current of the GTO.
申请公布号 JPS59148559(A) 申请公布日期 1984.08.25
申请号 JP19830021599 申请日期 1983.02.14
申请人 HITACHI SEISAKUSHO KK;HITACHI ENGINEERING KK 发明人 MAEDA TAKEO
分类号 H02M1/06;H02M1/08;(IPC1-7):H02M1/08 主分类号 H02M1/06
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