| 摘要 |
PURPOSE:To prevent an unnecessary interaction using beams as a medium generated among several element constituting an integrated circuit by forming isolation bands consisting of semiconductor layers, into which an impurity is doped in high concentration, among separate element constituting the integrated circuit. CONSTITUTION:A region 10, into which Zn is doped in high concentration, is formed between a LED element and a FET element as an isolation band. Beams emitted from a light-emitting region 3 in a LED attenuate during a passage through the isolation band 10. Consequently, unnecessary electron hole pairs are not generated in an active layer 8 in a FET, and an unnecessary interaction between the LED and the FET using beams as a medium is prevented. A method, such as a buried epitaxial growth diffusion method, an ion implantation method or the like can be used in order to form the region 10 into which Zn is doped. |
