发明名称 METHOD AND DEVICE FOR THIN FILM FABRICATION
摘要 PURPOSE:To fabricate a thin film having uniform quality by irradiating the substrate with electron beam and scanning it so as to vapor-deposit an evaporating substance on the substrate. CONSTITUTION:A hydrogen-gas introducing pipe 4 is connected to a bell-jar 1 connected to a vacuum pump through an exhaust way 5. Scanning-type electron beam generators 8A and 8B are arranged symmetrically under a vapor-deposition substrate 2 arranged in the bell-jar 1. In the bell-jar 1, an evaporation source 3 using silicon as an evaporating substance is arranged oppositely to the substrate 2. The generators 8A and 8B are driven to scan the electron beam from the generators in a manner the beam goes toward the substrate 2 thereby heating the evaporation source 3 and forming the thin film consisting of amorphous silicon including hydrogen on surface of the substrate 2.
申请公布号 JPS59148324(A) 申请公布日期 1984.08.25
申请号 JP19830021644 申请日期 1983.02.14
申请人 KONISHIROKU SHASHIN KOGYO KK 发明人 MIYOUKAN ISAO;KANEKO AKINARI
分类号 H01L31/04;G03G5/08;H01L21/203 主分类号 H01L31/04
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