发明名称 |
METHOD AND DEVICE FOR THIN FILM FABRICATION |
摘要 |
PURPOSE:To fabricate a thin film having uniform quality by irradiating the substrate with electron beam and scanning it so as to vapor-deposit an evaporating substance on the substrate. CONSTITUTION:A hydrogen-gas introducing pipe 4 is connected to a bell-jar 1 connected to a vacuum pump through an exhaust way 5. Scanning-type electron beam generators 8A and 8B are arranged symmetrically under a vapor-deposition substrate 2 arranged in the bell-jar 1. In the bell-jar 1, an evaporation source 3 using silicon as an evaporating substance is arranged oppositely to the substrate 2. The generators 8A and 8B are driven to scan the electron beam from the generators in a manner the beam goes toward the substrate 2 thereby heating the evaporation source 3 and forming the thin film consisting of amorphous silicon including hydrogen on surface of the substrate 2. |
申请公布号 |
JPS59148324(A) |
申请公布日期 |
1984.08.25 |
申请号 |
JP19830021644 |
申请日期 |
1983.02.14 |
申请人 |
KONISHIROKU SHASHIN KOGYO KK |
发明人 |
MIYOUKAN ISAO;KANEKO AKINARI |
分类号 |
H01L31/04;G03G5/08;H01L21/203 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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