| 摘要 |
PURPOSE:To form an insulating film consisting of an oxide which has uniform quality and with which dielectric breakdown hardly arises by supplying ionized or activated oxidative gas in an evacuated bell-jar, evaporating an oxide or metal and depositing the same by evaporation on a substrate to be subjected to vapor deposition. CONSTITUTION:A bias voltage is impressed by a power source 6 on a substrate 4 heated to about 150 deg.C by a heater 5 from the rear of said substrate, in a bell- jar 1 the inside of which is evacuated by a vacuum pump. Gaseous O2 13 as oxidative gas is ionized or activated with a gas discharge tube 14 and is supplied through a gas introducing pipe 15. An ITO vapor source 10 is heated to evaporate in this state, and a shutter S4 is opened to deposit ITO by evaporation, thereby forming an ITO transparent electrode on the substrate 4. A Y2O3 insulating film is formed on the substrate 4 from a Y2O3 vapor source 9 by the same operation as mentioned above. A light emitting layer is co-deposited by evaporation by a ZnS vapor source 7 and an Mn vapor source 8 in succession; thereafter an insulating layer is formed by vapor deposition in the same way as mentioned above, and further electrode is formed thereon, whereby an electroluminescence element having the excellent insulating film is obtd. |
