| 摘要 |
<p>PURPOSE:To shorten a gaseous phase treating time for bringing excellent humidity sensitive characteristics and to obtain stable characteristics, by subjecting a temp. detecting element to gas phase treatment under pressure equal to or higher than the atmospheric pressure in a high temp. and high humidity atmosphere. CONSTITUTION:Voltage of 25V is applied onto a tantalum wire 1, for example, at 85 deg.C by using a 1mol/l aqueous phosphate solution to perform chemical forming treatment whereupon an anodic oxidation film 2 is formed. In the next step, a manganese dioxide layer 3 is formed on the anodic oxidation film 2 by the coating and pyrolysis of an aqueous nitrate solution with specific gravity of 1.3. In addition, a carbon layer 4 is formed on the manganese dioxide layer 3 by the impregnation and drying of colloidal carbon and a silver paint layer 4 is formed on said layer 4. Subsequently, water is put in a hermetically closed container and heated from the outside to fill the interior thereof with high temp. steam and the formed substance is subjected to gaseous phase treatment by using a pressure pot capable of raising internal pressure to increase the area of a tantalum oxide part not covered with the manganese dioxide layer. By this method, uniform heating and pressurization can be applied to the whole of an element.</p> |
