Process for prebaking substrates coated with positive photoresist based on naphthoquinonediazide and phenolformaldehyde resin

摘要

In a process for prebaking substrates coated with positive photoresist based on naphthoquinonediazide and phenolformaldehyde resin, the substrates are brought in less than three seconds to the prebaking temperature, which is in the range from 110 to 140 DEG C, and the prebaking time is set in the range from 5 to 60 seconds depending on prebaking temperature. The process makes possible a good resist adhesion, low solvent residues, high photosensitivity, good etch resistance and the elimination of stresses in the photoresist layer. The process is used in photolithography procedures for manufacturing integrated circuits. <IMAGE>