| 摘要 |
PURPOSE:To enhance the speed and the stability by providing a source electrode and a drain electrode to connect with thin multilayer films made of two types of thin films having different forbidden band widths, and providing a gate electrode through a thin film layer in the section of the multilayer thin film. CONSTITUTION:At least 3 layers of the two types of thin films having different forbidden band widths are laminated on a substrate 1 so that the same types of thin films are not disposed adjacently to form multilayer thin films 2, the thin films fall within the range of 1-50 times of the lattice interval of the used material, and the thin films having wide forbidden band width is of P<+> or N<+> conductivity type. Source and drain electrodes 3, 4 are formed to connect with the thin films 2, thin film layers 5a, 5b having lattice constant of the same degree as the thin film having narrow band width in the films 2 and conductivity type different from that of the thin film are formed in contact with the section substantially perpendicular to the films 2 to form gate electrodes 6a, 6b. |
