| 摘要 |
<p>A semiconductor memory device comprises a plurality of memory cell blocks (11, 12,......18) corresponding to the output terminals (Q,, Q2,...Q8), respectively, and a redundancy memory cell block (19) for replacing a faulty memory cell block among the memory cell blocks, the redundancy memory cell block having a first specific area (19a) for storing a first predetermined data of electronic signatures, each of the memory cell blocks having a second specific area (11a, 12a,....18a) for storing a second predetermined data equal to a part of the first predetermined data in one by one correspondence. The semiconductor memory device further comprises a means for selectively reading, when one of the memory cell blocks is replaced by the redundancy memory cell block, the part of the first predetermined data corresponding to the second predetermined data stored in the memory cell block to be replaced by the redundancy memory cell block, whereby the second predetermined data can be correctly read out even when a faulty memory cell block is replaced with the redundancy memory cell block.</p> |
