发明名称 PHOTOCHEMICAL VAPOR DEPOSITION DEVICE
摘要 PURPOSE:To prevent the diffusion of plasma toward a substrate with simple constitution and to enable access of the substrate to a light source part in a titled device of a built-in electric discharge type by discharging a screen-like anode on the side of a discharge space near the substrate and a cathode on the side further therefrom. CONSTITUTION:A photoreactive gas is supplied through holes 11 into a cylindrical vessel 1 and is discharged through a hole 12. A substate 4 is supported in a support 13 contg. a heater and a reaction space 5 is formed under the support. The part beneath the same is discharge space 3. An anode 6 of relatively coarse mesh which is formed into a circular shape by weaving W wire rods to the screen and does not hamper the passage of UV light is provided at the boundary between the spaces 3 and 5. A cathode 7 is provided in the bottom of the vessel 1 and a heater 8 contacts the bottom surface thereof. When a voltage is impress between the electrodes 6 and 7, plasma discharge is accomplished in a perpendicular direction and the substrate 4 is irradiated with generated UV light. For example, amorphous Si is thus deposited by evaporation on the substrate 4.
申请公布号 JPS59145780(A) 申请公布日期 1984.08.21
申请号 JP19830018777 申请日期 1983.02.09
申请人 USHIO DENKI KK 发明人 TANAKA KAZUYA;SUGIOKA SHINJI
分类号 C23C16/48 主分类号 C23C16/48
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