| 摘要 |
PURPOSE:To correct an error in the size of a resist pattern by a development time and to obtain the resist pattern of invariably accurate size by measuring the spectral absorption of resist dissolved in a waste developer at an outlet and controlling the development time by variation in absorbancy. CONSTITUTION:A substrate 6 after being coated with photoresist, baked, and exposed is adhered onto a chuck 8, which is sprayed with a developer from a developer nozzle 4 while rotated by a motor 10. The photoresist is dissolved in the developer and discharged from the outlet together with the developer. The ultraviolet spectral absorption of the waste developer is measured by a light source, monochrometer 2, and detector 3 and the development is completed once the absorbancy varies, eliminating an error in size due to variance in the sensitivity of the photoresist, resist film thickness, time and temperature of baking, components of the developer, density, temperature, etc. |
