| 摘要 |
PURPOSE:To determine a timing signal for a circuit and the holding time of potential without considering the effect of beams by coating a diffusion layer region, in which some potential must be kept for a fixed time under the state separated from others in a circuit shape, with a substance having non-transmitting property to beams. CONSTITUTION:Electron-hole pairs are not generated by the effect of beams due to no-strike of beams because an N<+> diffusion layer region 11 is coated with an Al region section 17 reflecting beams. Consequently, the value of junction leakage is represented by a theoretical value even in an integrated circuit containing a UVPROM. Quite the same circuit system as a memory storage using a normal metallic cap can also be used even in an integrated circuit, at least one part thereof contains the UVPROM. |
