| 摘要 |
This invention is directed to an apparatus for preparing semiconducting and photoelectronic devices comprised of a first electrode means, a second counter electrode means, a receptacle means for the first electrode means and the second counter electrode means, a substrate means to be coated contained on the first electrode means, which substrate is in the form of a cylindrical member, and a gas inlet means, a gas exhaust means, wherein a silane gas is introduced into the receptacle in a crossflow direction, perpendicular to the axis of the cylindrical member.
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