| 摘要 |
PURPOSE:To simply form an island of a single crystal silicon surrounded by a silicon oxide by forming the surface of the silicon in porous state, annealing the part of the porous silicon and then oxidizing it. CONSTITUTION:The surface of a single crystal silicon substrate 20 is polished and subjected to anodic reaction in fluorided hydrogen solution, and the surface of the substrate 20 is converted to porous silicon 21. Part of the silicon 21 is annealed by a laser beam or the like, and converted to single crystallized silicon 22. Then, the substrate 20 which has the single crystalline silicon and the porous silicon is oxidized. Thus, islands of a plurality of single crystal silicons isolated by a dielectric layer of dioxidized silicon are obtained in one substrate. |
