| 摘要 |
A thin film (16) of a semiconductor material is applied to a substrate (10), such as stainless steel diaphragm, at temperatures below those at which the mechanical properties of the substrate are not substantially changed or deteriorated. The semiconductor material may be amorphous or polycrystalline and is deposited either as an underfed layer into at least the outer surface of which impurities are introduced, eg by ion implantation, or as a defed layer. A layer (14) of insulating material may be applied to the substrate before deposition of the semiconductor material. The products of such a process can be used as part of the active element of strain, pressure and force responsive transducers. <IMAGE> |
