| 摘要 |
PURPOSE:To easily form an inclined channel by means of the ion implantation, to simplify the construction of a device, to increase the fill factor and to provide finer picture elements, by introducing an impurity having an opposite type of conductivity to that of the substrate from the side of a photoelectric converting/storing section toward the side of a charge detecting section such that the quantity of impurity is progressively increased. CONSTITUTION:An inclined channel 3 is provided on every line vertical to photoelectric converting/storing sections 1, and control gates 2 are commonly connected in the horizontal direction. These commonly connected control gates 2 are turned ON successively, so that signal charges stored in the photoelectric converting/storing sections 1 are caused to flow into the inclined channels 3. For example, the inclined channel 3 has a length of 8mm and a gradient of about 10V/cm, and the charges move through the inclined channel 3 at a rate of about 1,500cm<2>/Vsec and reach a storing gate 4 in about 53musec at maximum. These signal charges are transferred to a horizontally transferring CCD 6 by means of a transferring gate 5 and further to a charge detecting section. |
