| 摘要 |
PURPOSE:To prevent invasion of the elements composing the semiconductor substrate into an insulating film in the semiconductor device in which an insulating film is formed on the semiconductor substrate of III-V group by consisting the insulating film of BNx mainly (x is 1 or a proximate value of it). CONSTITUTION:A semiconductor substrate 2 consisting of InP and so on is arranged in a cylindrical tube reactor 1 through a carrying table 3. A tube 4 is inserted from one end of the reactor 1 in a manner the free end of it goes beyond the substrate 2. Next, NH3, P, PH3 gas are supplied into the reactor 1 through the tube 4 and from a tube 5 arranged at another end of the reactor 1, B2, H6, H2 gas are supplied. At this time, the temperature of the substrate is determined to be 300-600 deg.C on the tube 5 side and 820 deg.C on the opposite side. Whereas restraining evaporation of P from the substrate 2 by P-gas, N-gas is flown from the tube 5 to carry out reaction with B2H6, thereby producing an insulating film 6 consisting of BNx (x is 1 or a proximate value of it) on the substrate 2. |
