发明名称 MANUFACTURE OF MATERIAL FOR SEMICONDUCTOR SUBSTRATE
摘要 <p>PURPOSE:To obtain the titled material of small dispersion of density and less shape strain by a method wherein organic binder and solvent are added to W powder, Mo powder, W-Mo alloy powder, etc. and then kneaded, thereafter being changed into a molded body by extruding with an extruding machine, which body is heated in non-oxidative atmosphere until the binder and the solvent evaporate and decompose, and Cu of a specific ratio of volume is impregnated in the obtained sintered porous body. CONSTITUTION:A very small amount of iron group elements such as Fe, Ni, and Co at 0.02-2wt%, polyvinylbutyral, and methanol are added to the powders of W, Mo, W-Mo alloy, etc. whose average grain size is 0.5-10mum, and then kneaded, thereafter extruded and molded, thus obtaining a molded body of approx. 0.1-2mm.. Next, it is heated to 1,350-1,600 deg.C in H2 gas until the binder and the solvent evaporate and become dry, resulting in the formation of the sintered porous body having a fixed rate of porosity. Afterwards, the Cu at 5-25 volumetric % is impregnated at a temperature over the melting point of Cu, and accordingly the titled material without the dispersion of density and the shape strain is obtained.</p>
申请公布号 JPS59143347(A) 申请公布日期 1984.08.16
申请号 JP19830017141 申请日期 1983.02.03
申请人 SUMITOMO DENKI KOGYO KK 发明人 OSADA MITSUO;HASE SOUGO;OOTSUKA AKIRA
分类号 B22F3/11;B22F3/26;B22F5/00;H01L21/52;H01L23/14 主分类号 B22F3/11
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