发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To obtain a monolithic IC which shortens the time of signal delay and has a high operating speed without the generation of malfunctions by a method wherein a light emitting element and a light receiving element are formed on the same substrate as a semiconductor substrate provided with an IC element, and signal transmission by means of electromagnetic waves is performed therebetween. CONSTITUTION:Input terminals 2a-2c consisting of bonding pads are provided at one end of the substrate 1 of GaAs, etc., and an output terminal 3 of the same structure at the other end, and an internal circuit 4 such as an FET is formed by being positioned therebetween. It is connected to the input terminals and the output terminal via wirings 5a1-5a3 and 5b, respectively. Next, the light receiving elements 6a-6c put in conduction state respectively by light irradiation are connected between the wirings 5a1-5a3 and a power source voltage VCC. The light emitting element 7 is connected between the wiring 5b and the ground point of the circuit. When light signals are made incident from an external light emitting device 10a to the elements 6a-6c in such a constitution, the elements come in conduction state and operates the circuit 4, thus making the element 7 emit light only during this time, and enabling the detection in the light emitting device 10b.</p>
申请公布号 JPS59143338(A) 申请公布日期 1984.08.16
申请号 JP19830017338 申请日期 1983.02.07
申请人 HITACHI SEISAKUSHO KK 发明人 KURODA KENICHI
分类号 H01L21/66;H01L31/12 主分类号 H01L21/66
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