发明名称 |
METHOD OF MANUFACTURING A SILICON WAFER WITH INTERIOR MICRODEFECTS CAPABLE OF GETTERING |
摘要 |
A semiconductor wafer is first heat treated in a non-oxidising atmosphere in a temperature in the range from 950 DEG C to 1300 DEG C to diffuse out oxygen (O2) from near the surfaces 1 and 2 of the wafer (oxygen density shown by broken line in Figure 3B). The wafer is then heat treated at a temperature in the range from 600 DEG C to 800 DEG C to create a high density of defects 3 (defect density shown by solid lines in Figures 3B and 3D) which are capable of gettering, in the interior of the wafer. |
申请公布号 |
DE3068562(D1) |
申请公布日期 |
1984.08.16 |
申请号 |
DE19803068562 |
申请日期 |
1980.12.04 |
申请人 |
VLSI TECHNOLOGY RESEARCH ASSOCIATION |
发明人 |
NAGASAWA, KAZUTOSHI;KISHINO, SEIGO;MATSUSHITA, YOSHIAKI;KANAMORI, MASARU |
分类号 |
H01L21/322;(IPC1-7):H01L21/32 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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