| 摘要 |
PURPOSE:To obtain a preferable heat sink high frequency package by connecting a metal wall and an insulating wall with the peripheral surface, leading a grounding lead from the metal wall, bonding a bottom plate at the center via a metal plate to a semiconductor chip and at the other via an insulating plate. CONSTITUTION:The center 1a of a bottom plate is formed of an oxygen-free copper, and the periphery is formed of ceramic 1b. A wall 1a for leading a grounding lead 6a is formed of the copper, and a wall 2b for leading input/ output lead 7a is formed of ceramic. The walls 2a, 6a, 8a are integrated as a block 11. The bottom plate 1b, the wall 1b, metallized films 4a, 5a and 12-14 are together baked to be integrated. The metal bottom plate 1a, the terminal block 11 are disposed at the prescribed positions of baked unit, kovar 15 is brazed on the film 4a, external leads 7a, the walls 2a, 2b under the wall 1b, and Au-plated. They are associated as usual, and a cover 10 is sealed. Since the connections to the terminals 6a, 8a and the sealing material 15 are executed by the thick meal 2a, an inductance is largely decreased to improve usable frequency and heat sink. |
