| 摘要 |
PURPOSE:In growth of a thick film of garnet by liquid-phase epitaxial method, to obtain the thick film of garnet free from defects from a stable melt, by specifying a concentration ratio of iron oxide to rare earth element oxide in the melt. CONSTITUTION:In growing a thick film of garnet such as magneto-optical element, etc. by liquid-phase epitaxial method, a concentration ratio R of iron oxide (Fe2O3) to rare earth oxide (Ln2O3) of (Fe2O3)/(Ln2O3)=R is adjusted to >16 to grow the film. By this method, melt having initial crystal of garnet can be used, precipitation of orthoferrite can be prevented, so that the thick film of garnet free from defects can be grown. Redissolution of precipitated garnet can be prevented. |
