| 摘要 |
PURPOSE:In a device for growing molecular beam crystal, to reduce defect density on the surface of growing crystal, by setting a molecular beam speed discriminator between a molecular beam source filled with element of III group and a substrate. CONSTITUTION:Ga 1 and As 2, respectively, are filled into the molecular beam sources 3 attached to the ultra-high vacuum chamber 4, and heated to produce molecular beam flows of ga and As vapor, which are hit to the substrate crystal 5 (the sign 6 is holder, and the sign 7 is heater), to grow GaAs crystal. In the device, the molecular beam speed discriminator 8 made by fixing plural sheets of the spiral plates 9 to the revolving shaft 10 between the molecular beam source 3 of Ga and the substrate crystal 5, the discriminator 8 is turned at a given speed, passage of large Ga particles is prevented, and only molecular beam of Ga is passed. This method is similarly effective when it is applied to growth of single crystal of semiconductor (e.g., In-As) of other III-V compounds. |
