发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device is constituted by a MOS transistor having a floating gate for storing data. An erase gate, a portion of which is under a part of the floating gate, is arranged on the MOS transistor to discharge electrons from the floating gate. The MOS transistors are arranged in a matrix form in which the erase gates of all the MOS transistors are commonly connected and a data erase voltage is applied to the erase gates to erase the data.
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申请公布号 |
US4466081(A) |
申请公布日期 |
1984.08.14 |
申请号 |
US19810320935 |
申请日期 |
1981.11.13 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
MASUOKA, FUJIO |
分类号 |
G11C16/04;G11C16/16;H01L29/788;(IPC1-7):G11C11/40 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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