发明名称 Method and device relating to thin-film cermets
摘要 The subject invention involves the provision of a cermet for providing relatively high resistivity in a relatively small space. The cermet includes a substrate and multiple, ultra-thin, alternating layers of conductive and nonconductive materials on the substrate. Each ultra-thin layer is formed by radio-frequency sputtering to produce layers of discontinuous islands of particles of each of the above materials. The invention also relates to a method of producing such cermets by radio-frequency sputtering.
申请公布号 US4465577(A) 申请公布日期 1984.08.14
申请号 US19830480935 申请日期 1983.03.31
申请人 GOULD, INC. 发明人 TANIELIAN, MINAS H.
分类号 C23C14/06;H01C7/00;H01C17/12;(IPC1-7):C23C15/00 主分类号 C23C14/06
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