| 摘要 |
PURPOSE:To uniform the production of CVD film and plasma etching, by splitting one electrode opposing to the test piece into a plurality and by adjusting the distance with the test piece from each electrode with removalbe constitution. CONSTITUTION:Opposed to the semoconductor wafers 3, 4, 5 placed on one electrode 1, the movable electrodes 7, 8, 9, 10, 11 split into a plurality are placed by making different the distance slightly from the electrode 1. Reaction gas is introduced between the opposing electrodes and the distance is set so that the strength of the plasma caused when high frequency voltage is applied among the electrode 1 and the electrodes 7 to 11 can be uniformed over for any location of the electrode as shown in dotted lines 6. Thus, as the reaction of the plasma gas advances, the producing film of the same thickess almost can be deposited on the wafers 3 to 5. |
