| 摘要 |
PURPOSE:To prevent a compound semiconductor substrate from generation of a pattern defect at annealing time by a method wherein compound semiconductor substrates of the plural number of pieces are stacked in the condition formed with thin film layers having the faculty of spacers, or interposed with spacers extending over the whole of the outer edge parts of the confronting surfaces of the substrate, and annealing is performed in an inactive or a hydrogen atmosphere. CONSTITUTION:Thin film layers 5, 6 are provided respectively to the outer edge parts of the confronting surfaces of GaAs substrates 1, 3 set in a circle. The thin film layers 5, 6 thereof are formed by performing high-frequency sputtering of SiO2, Si3N4, etc. through a metal mask, for example, and the thickness thereof is made thicker than thickness of fine patterns 2, 4 on the GaAs substrates 1, 3. When annealing is performed holding the GaAs substrates 1, 3 to confront mutually in such a condition, the thin film layers 5, 6 carry out the duty as spacers, both the fine patterns 2, 4 are not made to come in contact mutually, and eneration of wear and deformation is removed. |
