| 摘要 |
PURPOSE:To obtain the planar type semiconductor device comprising a high withstand voltage by composing the resistive field plate within a range 20-80mum from the edge of a p-n junction out of a low resistance conductive film virtually. CONSTITUTION:A CVD oxide film 16 is formed and it is patterned in a manner it covers from the edge of a junction of a base layer 12 to a field region. Then, after the deposition and patterning of an A film, source electrodes 17 and 18 which come in contact with a source layer 13 and the base layer 12 at the same time and an electrode 20 which comes in contact with a substrate through a contact layer 19 are formed. At that time, the source electrode 18 extends on an insulating film 16 only by a predetermined distance L(=20-80mum) from the edge of a junction of the p<+> type base layer 12. Next, a drain electrode 22 is formed on the back side of the substrate by vapor deposition of a V-Ni-Au film. Lastly, an amorphous silicon film as a high resistance film 21 is formed on the surface of the substrate and it is patterned in a manner it extends from the electrode 18 to the electrode 20 so as to compose a field plate. |
