| 摘要 |
PURPOSE:To give a high heat conductivity and a high-seed signal propagation property and to prevent solder bumps from being broken by a method wherein, in connection of a silicon chip to the substrates, the chip is first connected to the first high-heat conductive substrate, then the coupled unit of the chip and the substrate is bonded to the second low-dielectric constant substrate. CONSTITUTION:A semiconductor chip 11 is connected to a high-heat conductive substrate 13 with solder bumps 12 and each of the solder bumps 12 is connected to the metallized wiring layer 16 of a low-dielectric constant substrate 14 through pins 15 to penetrate the substrate 13. As the chip 11 is connected to the substrate 13 made of such a high-heat conductive substance as an SiC and an AlN with the solder bumps 12, the heat to generate from the chip 11 is efficiently dissipated through the substrate 13, while as a signal is not propagated at high speed, the chip 11 is connected to the metallized wiring layer 16 of the substrate 14 made of such a low-dielectric constant substance as glass ceramics and mullite ceramics through the pins 15. By this constitution, the high heat conductivity and the high-speed signal propagation property are ensured and the fatigue breaking of the solder bumps can be prevented. |
