| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit device containing a bipolar transistor at high speed without increasing a manufacturing process by improving the low speed property of a lateral bipolar transistor and the controllability of a vertical type bipolar transistor. CONSTITUTION:A vertical type p-n-p transistor is formed by regions 42, 41, 39, a vertical type n-p-n transistor is formed by regions 46, 43, 33, and an IIL is formed by regions 44-1, 44-2, 48-1, 48-2, 50, 33. A concentration gradient is formed in the lower direction from the upper direction in the n region 41 as a base in the vertical type p-n-p transistor, and operation at high speed is enabled. Dielectric resistance is also high because the concentration of the p region 39 as a collector takes p<->. Since the n type layer 50 in concentration higher than the n type epitaxial layer 33 is in contact directly with the base layer 44-2 in the high-speed IIL, a current amplification factor is increased, and the speed of the IIL can be accelerated. Since the base 43 is in contact with the low-concentration collector 33 in the vertical type n-p-n transistor, the dielectric resistance of the base and the collector is not lowered. |
