| 摘要 |
PURPOSE:To enable multiple fine probes arranged with excellent precision to be formed easily by a method wherein multiple probes to come into contact with electrode lead terminals of IC chips and a metallic layer formed through the intermediary of an insulating film are arranged on the main surface of a substrate provided with a hollow part at the central part thereof by means of photolithography so as to protrude a part of the metallic layer beyond the hollow part. CONSTITUTION:An SiO2 insulating film 4 is formed on a substrate 2 then a metallic layer 35 made of Au etc. is formed. Firstly multiple lead wirings 5 with their ends to be probes are formed by means of patterning the metallic layer 35 into specified pattern by photolithographic process. Then the insulating film 4 in the peripheral region thereof is selectively etched using each end to be probes of the multiple lead wirings 5 as a mask. Secondly the central part of the semiconductor substrate 2 containing each end to be the probes of the multiple lead wirings 5 may be selectively and anisotropically etched to form a penetrated hollow part 3. |
