| 摘要 |
PURPOSE:To obtain soft-error resistance by selectively forming a buried layer by a substance, carrier mobility and a bond gap thereof are high, on a substrate and forming a capacitor electrode and a transistor gate section through an insulating film. CONSTITUTION:A capacitor in a silicon substrate 1 and a section corresponding to a region of a transistor gate are removed selectively through etching, epitaxial layers 10 made of SiC or GaAs as a substance, carrier mobility and a band gap thereof are high, are grown, a silicon oxide film 2, a silicon oxide film 3 as capacitance, a capacitor electrode 4 and a gate electrode 5 in a transfer transistor are formed, and an impurity is diffused to form source-drain regions 6. When alpha particles intrude, pairs of electrons and holes are difficult to be generated wxtremely because the band gap is higher than Si in the substrate in the epitaxial layers 10 in a capacitor section. |
