| 摘要 |
A semiconductor device (10) having a multi-level metallization structure wherein the first level (26) is of aluminium containing silicon, and the second level (34) is either aluminium or aluminium containing silicon in an amount less than that contained in the first level (26). The two levels (26, 34), where they contact each other, are sintered together, with some of the silicon from the first level (26) being diffused into the second level (34) so that the second level (34) has a region (34a), adjacent the junction between the two levels (26, 34), which has a higher content of silicon than the remaining portion of the second level (34). When making the device (10), the surface of the first level (26), where it is to be joined with the second level (34), is etched to remove some of the aluminium, but not the silicon, which roughens this surface. The second level (34) is applied on this roughened surface, and the device (10) is heated to sinter the two levels (26, 34) together and diffuse the silicon into the second level (34). <IMAGE> |
