| 摘要 |
PURPOSE:To easily manufacture a semiconductor substrate having a single crystal semiconductor layer in excellent crystallization on an insulating plate by providing the structure that a heating body which heats a semiconductor substrate is provided with the regions having the melting points higher and lower than that of semiconductor at the region in the side semiconductor substrate and a means for moving the semiconductor substrate and heating body relatively in the opposing direction. CONSTITUTION:A semiconductor substrate 4, where a semiconductor layer 42 consisting of a polycrystal silicon and then an insulating layer 43 consisting of a silicon dioxide are formed sequentially on an insulative plate 41 by low temperature chemical vapor growth method, is prepared. This semiconductor substrate 4 is placed on the one shielding plate 32 of the heating body 3 and the heating body 3 is guided into a quartz tube 1. A high frequency current is applied to a work coil while the nitrogen gas is introduced into the quartz tube 1 and thereby a heat generating body 31 of the heating body 3 is heated up to a temperature higher than the melting point of silicon. A semiconductor substrate 4 is moved at a speed, for example, of 1mm./sec on the heating body 3 from the one shielding plate 32 to the other shielding plate 32 in the direction indicated by the arrow mark. The semiconductor layer 42 of semiconductor substrate 4 changes to single crystal from polycrystal because melting and recrystallization occur when it passes the region T1 heated upto a temperature higher than the melting point of silicon. |
