发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To form a protective film and/or a wired layer insulating material generating no defective galvanic corrosion for a prolonged period, by applying and curing a silicone resin solution on a substrate. CONSTITUTION:Tetraalkoxysilane is hydrolyzed and polycondensed into a polydialkoxysilane prepolymer (PDAS) in the presence of hydrogen chloride. The PDAS is dissolved in an organic solvent of the boiling point of 110 deg.C or above and the obtained solution is brought to a state of a temperature of 40 deg.C or below and a pressure of 5mm.Hg or below to expel hydrogen chloride. The obtained PDAS solution, alone or in admixture with a polysilsesquioxane prepolymer, is applied on a metallic film on a garnet substrate and cured, thus forming an insulating material and/or a protective film made of a silicon resin. Methyl cellosolve acetate, ethyl cellosolve acetate, n-butyl alcohol or a mixed organic solvent containing either of them is used as the organic solvent.
申请公布号 JPS59139632(A) 申请公布日期 1984.08.10
申请号 JP19830007044 申请日期 1983.01.19
申请人 FUJITSU KK 发明人 TAKEDA SHIROU;NAKAJIMA MINORU
分类号 H01L21/768;H01L21/312;H01L23/29;H01L23/31;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项
地址