| 摘要 |
<p>PURPOSE:To obtain an optically coupled semiconductor device designed to upgrade the insulating withstand voltage between input and output by a method wherein optical paths are interposed between a light-emitting element and a light-receiving element, which are opposingly arranged to each other, or light-transmitting cyclized butadiene rubber covering the circumference of these is interposed between the optical paths. CONSTITUTION:Cyclized butadiene rubber 7 is interposed between optical paths between a light-emitting element 1 and an external lead 2 on the side of input and a light-receiving element 3 and an external lead 4 on the side of output, and these are tightly bonded their outer peripheries with epoxial resin 6. Due to this high insulating withstand voltage of the cyclized butadiene rubber, a characteristic of insulating withstand voltage as higher as about three times is obtained in the size of the same type as the conventional one. Besides, a light-emitting diode using GaAs, GaP, GaAsP, GaAlAs and the like as the material is used for the light-emitting element 1, while for the light-receiving element 3 is used a light-receiving element, which has been already in general use, such as phototransistor, photothyristor or CdS sensitized element, etc., including silicon photodiode. For the external leads 2 and 4 is used a lead frame for semiconductor element. Each element is tightly adhered to this lead frame and the connection between each element is performed by a fine wire 8.</p> |
