| 摘要 |
PURPOSE:To form plasma in high concentration, to elevate the concentration of active seeds, to increase the rates of etching and deposition and to improve accuracy on etching and the uniformity of the thickness of a thin-film by mounting a magnet between a pair of opposite electrodes and forming a magnetic field orthogonal to a high-frequency electric field between both electrodes. CONSTITUTION:A pair of opposite parallel plate electrodes 12, 13 are disposed in a reaction vessel 11 while a susceptor 14 is placed on the electrode and a sample 15 of a substrate to be etched is placed, and the electrode 12 is connected to a high-frequency power supply 16. The electrode 13 is grounded. A gas introducing port 17 and an exhaust port 18 are formed to the reaction vessel 11, and a predetermined gas is supplied while the inside of the vessel 11 is controlled at desired gas pressure. Permanent magnets 19 are disposed outside the electrodes 12 and 13 so as to form a magnetic field (B) orthogonal to the direction of a high- frequency electric field shaped by high-frequency power between the electrodes 12 and 13. According to the constitution, electrons in plasma (P) generted between the electrodes 12, 13 are subjected to the action of mutually orthogonal electric field and magnetic field, and perform a cycloidal motion. |
