| 摘要 |
<p>PURPOSE:To enable to increase the degree of freedom of the layout and wiring design of a circuit element as well as to prevent the lowering of the degree of integration by a method wherein a conductive wiring type low resistance region which is lower than the resistance element region provided at a part of the resistance element region superposed through the intermediary of an interlayer insulating film is contained. CONSTITUTION:A P type resistance element region 2 is provided on an N type semiconductor substrate 1, and a high density P type diffusion layer 3 is provided at the terminal lead-out part of the resistance element. On the resistance element region of the part where a conductive wiring 6 intersects with a resistance element region 2 through the intermediary of an interlayer insulating film 4, a region 3' of the same conductive type as said resistance element region, which has the resistance lower than that of the P type resistance element region, is provided. As the depletion and accumuration of electric charge are performed in the region located very close to the surface of the low resistance region 3', the effect inflicted to the current running to the resistance element region 2 becomes very slight. Accordingly, at the crossing part of the resistance region where crosstalk will be brought about as a problem and the conductive wiring having a large potential amplitude, the charge in wiring configuration, charge in the layout of the resistance element and the like are unnecessitated.</p> |
