CMOS INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To give direct access to a CMOS static RAM through an ECL circuit and to facilitate production of a CMOS IC device by using an input level converting circuit which receives a signal of a level of emitter coupled logic ECL and converts it into a CMOS signal. CONSTITUTION:An input level converting circuit is provided to a CMOS IC device to receive a signal of ECL level and converts it into a signal of MOS level. Then an external address or a control signal is supplied to the base of an nMOS FETQ10 from a terminal ECLIN. A differential nMOSFETQ9 is connected to the FETQ10, and the reference voltage Vref for level dicision is applied to the base of the FETQ9. Then a constant current source containing an nMOSFETQ13 is connected to a common source. While pMOSFETs Q11 and Q12 which work as current mirror type active loads are connected to the drains of FETs Q9 and Q10 respectively. The voltage Vref is produced by a circuit consisting of partial pressure resistances R3 and R4, MOSFETs Q1-Q8, etc. Then direct access is given to a CMOS RAM through an ECL circuit.