| 摘要 |
1. Method of making a thin film capacitor with metal oxide or nitride dielectric with a high dielectricity constant, where on an isolation or semiconductor substrate (11) a first electrically conductive metal thin film is applied as capacitor electrode (13) on which in a vacuum chamber a metal oxide or nitride layer is formed as dielectric thin film (15), to apply subsequently a second electrically conductive metal thin film as a counter capacitor electrode (17), characterized in that the surface of the capacitor electrode (13) is directly exposed to the ion beam implantation so that the respective metal thin film region, depending on the type of ions implanted, is transformed either into a metal oxide or metal nitride layer on the capacitor electrode (13), that subsequently, by means of a heating process step, in an oxygen or nitrogen atmosphere selected depending on the ion type used for ion beam implantation, the surface defects caused by ion beam implantation of the dielectric thin film (15) are eliminated by means of temperature processing before the counter capacitor electrode (17) is finally deposited. |
