| 摘要 |
PURPOSE:To obtain antistatic effect and reflection preventive effect of a photomask prepd. by plasma etching using chlorine or similar gas by providing a light shielding metallic film of a specific element on a glass base plate and forming a reflection preventive film of an oxide of a specified element thereon. CONSTITUTION:A light shielding metallic film 3 is formed on a glass base plate 1 using Si, Ge, Sb, or Au. A reflection preventive film 4 is formed further on the film 3 using an oxide of Si, Ge, or Sb. On one hand, a transparent conductive film 2 is formed using an oxide of Fe, In, Re, Pb, Zn, Ni, or Co between the base plate 1 and the film 3. The photomask in accordance with this constitution is easily etched at the film 3 and the film 4 by the plasma etching using chlorine or similar gas, but the conductive film 2 has resistance to the etching. Easily etchable films 3 and 4 serve as masking material, and hardly etchable conductive film 2 has antistatic effect, therefore, the breakage due to electric charge and multiple reflection are both prevented. |
