| 摘要 |
<p>PURPOSE:To obtain a device without the generation of floating gate effect by using SOS technique without using an expensive sapphire by forming an oxide layer under the surface of a semiconductor wafer, and providing thereon a channel region of conductivity type reverse to that of the wafer, thus forming it into the titled device. CONSTITUTION:An SiO2 layer 102 coming inward from the surface of the semiconductor wafer 103 is formed, and the MIS channel region 104 of conductivity type reverse to that of the wafer 103 is provided at the center of this surface. Next, an MIS source region 105 and an MIS drain region 106 are formed by being positioned at both sides of this region 104, thereby said wafer is changed into a semiconductor wafer 101 for an IC. Thereafter, an oxide film is adhered on the surface, and an MIS gate electrode 109 is mounted on the film by corresponding to the channel region 104. Thus, impurity diffusion in excess is unnecessitated to form the regions 105 and 106, therefore the stress at the interface between the layer 102, crystal defect, interface level, and interface leakage can be minimized.</p> |
