| 摘要 |
In a semiconductor device wherein a semiconductor substrate 2 is bonded to a metal layer 19 at the bottom of a recess in a ceramic package 1 and includes a substrate biasing circuit, a first wiring layer 7, 10%, of silicon containing aluminum, or polycrystalline silicon, is connected directly to a source 3 or drain 3 of an insulated gate field effect transistor in the biasing circuit and extends on to a field insulating film 5 on the substrate surface, and a second wiring layer 11 of pure aluminium contacts the first wiring layer on the insulating film and is directly connected to a connecting section of a scribe line region 21 of the substrate. This pure aluminium wiring layer makes a more stable contact with the substrate than the materials used for the first wiring layer. <IMAGE> |
